IGBT Transistors original fgh40n60 40n60 IGBT TO247 600 В 40A

Absolute Maximum Ratings

Notes:

1: Repetitive rating: Pulse width limited by max. junction temperature

Thermal Characteristics

Symbol Description Ratings Unit

VCES Collector to Emitter Voltage 600 V

VGES Gate to Emitter Voltage ? 20 V

IC

Collector Current @ TC = 25oC 80 A

Collector Current @ TC = 100oC 40 A

ICM (1) Pulsed Collector Current @ TC = 25oC 120 A

PD

Maximum Power Dissipation @ TC = 25oC 290 W

Maximum Power Dissipation @ TC = 100oC 116 W

TJ Operating Junction Temperature -55 to +150 oC

Tstg Storage Temperature Range -55 to +150 oC