Оперативная память DDR3

Рабочая

Характеристики

FEATURES • JEDEC standard 1.5V (1.425V ~1.575V) Power Supply • VDDQ = 1.5V (1.425V ~ 1.575V) • 667MHz fCK for 1333Mb/sec/pin • 8 independent internal bank • Programmable CAS Latency: 9, 8, 7, 6 • Programmable Additive Latency: 0, CL - 2, or CL - 1 clock • Programmable CAS Write Latency(CWL) = 7 (DDR3-1333) • 8-bit pre-fetch • Burst Length: 8 (Interleave without any limit, sequential with starting address “000” only), 4 with tCCD = 4 which does not allow seamless read or write [either on the fly using A12 or MRS] • Bi-directional Differential Data Strobe • Internal(self) calibration : Internal self calibration through ZQ pin (RZQ : 240 ohm ± 1%) • On Die Termination using ODT pin • Average Refresh Period 7.8us at lower than TCASE 85°C, 3.9us at 85°C < TCASE < 95°C • Asynchronous Reset • PCB: Height 1.18” (30mm), double sided component